Datasheet Details
| Part number | AOW66412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.85 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOW66412-AlphaOmegaSemiconductors.pdf |
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Overview: AOW66412 40V N-Channel AlphaSGT TM General.
| Part number | AOW66412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.85 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOW66412-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Tele and Industrial Top View TO-262 Bottom View 100% UIS Tested 100% Rg Tested 40V 120A < 1.9mΩ < 2.5mΩ D Orderable Part Number AOW66412 G DS G SD Package Type TO-262 Form Tube G S Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 120 120 600 45 36 60 540 260 104 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 55 Maximum Junction-to-Case Steady-State RθJC 0.4 Max 20 65 0.48 Units °C/W °C/W °C/W Rev.1.0: December 2017 .aosmd.
Page 1 of 6 AOW66412 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PAR
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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