AOWF10N65 Overview
Description
Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom View 750V@150℃ 10A < 1W D S GD AOW10N65 G SD DS G AOWF10N65 G D S G Parameter Symbol AOW10N65 AOWF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 6.2 6.2* 36 3.4 173 347 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 28 2 0.22 Junction and Storage Temperature Range Maximum lead temperature for soldering TJ, TSTG -55 to 150 purpose, 1/8" from case for 5 seconds TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOW10N65 65 0.5 AOWF10N65 65 -- Maximum Junction-to-Case RqJC 0.5 4.5 * Drain current limited by maximum junction temperature.
