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AOWF12T60 Datasheet 12a N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOWF12T60 600V,12A N-Channel MOSFET General.

General Description

Product Summary The AOWF12T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-262F Bottom View 700 48A < 0.52Ω 33nC 4.5µJ D DS G AOWF12T60 G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current TC=25°C TC=100°C ID 12* 9* Pulsed Drain Current C IDM 48 Avalanche Current C,J IAR 12 Repetitive avalanche energy C,J EAR 72 Single pulsed avalanche energy G EAS 607 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 50 5 A A mJ mJ V/ns TC=25°C Power Dissipation B Derate above 25oC PD 28 0.2 W W/ oC Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.

Maximum 65 4.5 Units °C/W °C/W Rev.1.0 July 2013 .aosmd.

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