AOWF12T60 Overview
Key Specifications
Package: TO-262-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
Product Summary The AOWF12T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-262F Bottom View 700 48A < 0.52Ω 33nC 4.5µJ D DS G AOWF12T60 G D S G S Parameter Symbol Maximum Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current TC=25°C TC=100°C ID 12* 9* Pulsed Drain Current C IDM 48 Avalanche Current C,J IAR 12 Repetitive avalanche energy C,J EAR 72 Single pulsed avalanche energy G EAS 607 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 50 5 A A mJ mJ V/ns TC=25°C Power Dissipation B Derate above 25oC PD 28 0.2 W W/ oC Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
