AOZ9250DI Key Features
- Integrated mon-Drain N-Channel MOSFET 23.8m (typ.) source to source on resistance
- High-accuracy voltage detection circuit
- Overcharge detection accuracy: 25mV (25°C), 45mV (-10°C to 60°C)
- Overcharge release accuracy: 40mV
- Over-discharge detection accuracy: 100mV
- Over-discharge release accuracy: 100mV
- Discharge over-current detection accuracy: 10mV
- Charge over-current detection accuracy: 1