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AA032P1-00 - 30-36 GHz GaAs MMIC Power Amplifier

Description

Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz.

Features

  • 2.415 1.929 1.099 0.597 0.000 0.000 0.120 0.107 1.143 2.179 2.285 1.937 1.099 0.597 I Single Gate and Drain Biases I 25 dBm Typical P1 dB Output Power at 31 GHz I 11 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.143.

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Datasheet Details

Part number AA032P1-00
Manufacturer Alpha Industries
File Size 163.47 KB
Description 30-36 GHz GaAs MMIC Power Amplifier
Datasheet download datasheet AA032P1-00 Datasheet
Additional preview pages of the AA032P1-00 datasheet.

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Full PDF Text Transcription

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30–36 GHz GaAs MMIC Power Amplifier AA032P1-00 Features 2.415 1.929 1.099 0.597 0.000 0.000 0.120 0.107 1.143 2.179 2.285 1.937 1.099 0.597 I Single Gate and Drain Biases I 25 dBm Typical P1 dB Output Power at 31 GHz I 11 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.143 Description Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
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