AA035P3-00 Overview
Alpha’s three-stage reactively-matched Ka band GaAs MMIC driver amplifier has a typical P1 dB of 17 dBm with 18 dB associated gain at 35 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, which is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and...