Datasheet Summary
May 2003
AO7407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -1.2 A RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 170mΩ (VGS = -2.5V) RDS(ON) < 220mΩ (VGS = -1.8V)
SC-70 SOT 323 Top View G D S...
