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AO7407 - P-Channel MOSFET

General Description

The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -20V ID = -1.2 A RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 170mΩ (VGS = -2.5V) RDS(ON) < 220mΩ (VGS = -1.8V) SC-70 SOT 323 Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -1.2 -1.0 -10 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperat.

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Datasheet Details

Part number AO7407
Manufacturer Alpha Industries
File Size 263.67 KB
Description P-Channel MOSFET
Datasheet download datasheet AO7407 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 2003 AO7407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -1.2 A RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 170mΩ (VGS = -2.5V) RDS(ON) < 220mΩ (VGS = -1.8V) SC-70 SOT 323 Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -1.2 -1.0 -10 0.35 0.