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AO7403 Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO7403 P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.

It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.

It is ESD protected to 2KV HBM.

Key Features

  • VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V) D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -20 ±8 -0.7 -0.5 -3 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C ID IDM PD TJ, TSTG TA=70°C W °C Junction and Storage Temperature Range Thermal Char.

AO7403 Distributor