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AO7403, AO7403L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7403 uses advanced trench technology to provide excellent RDS(ON) , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. AO7403L (Green Poduct) is offered in a lead-free package.
Features
VDS (V) = -20V ID = -0.7A RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.