Datasheet Summary
Feb 2003
AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Features
VDS (V) = 20V ID = 5A RDS(ON) < 50m Ω (VGS = 4.5V) RDS(ON) < 65m Ω (VGS = 2.5V) RDS(ON) < 90m Ω (VGS = 1.8V)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
G1 S1
G2...
