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AO9926 - Dual N-Channel MOSFET

Description

The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 8V.

The two devices may be used individually, in parallel or to form a bidirectional blocking switch.

Features

  • VDS (V) = 20V ID = 5A RDS(ON) < 50m Ω (VGS = 4.5V) RDS(ON) < 65m Ω (VGS = 2.5V) RDS(ON) < 90m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 20 ±8 5 4.2 20 2 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Sto.

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Datasheet Details

Part number AO9926
Manufacturer Alpha Industries
File Size 234.80 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO9926 Datasheet

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Full PDF Text Transcription

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Feb 2003 AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. Features VDS (V) = 20V ID = 5A RDS(ON) < 50m Ω (VGS = 4.5V) RDS(ON) < 65m Ω (VGS = 2.5V) RDS(ON) < 90m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 20 ±8 5 4.2 20 2 1.
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