Datasheet Summary
August 2002
AO4415 P-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V)
The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
SOIC-8 Top View S S S G D D D...
