Datasheet Summary
AO4418 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SD SD SD...
