Datasheet Summary
AO4427 P-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ (VGS = -20V) RDS(ON) < 14mΩ (VGS = -10V) ESD Rating: 2KV HBM
The AO4427 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS & Sony 259 specifications). AO4427L is a Green Product ordering option. AO4427 and AO4427L are electrically identical
SOIC-8 Top View S S S G D D D...
