Datasheet Summary
AO4476 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4476/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AO4476 and AO4476L are electrically identical. -RoHS pliant -AO4476L is Halogen Free
Features
VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5V)
UIS Tested Rg,Ciss,Coss,Crss...
