Datasheet Summary
20V Dual N-Channel MOSFET
General Description
The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.
Product Summary
VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14mW (VGS = 10V) RDS(ON) < 15mW (VGS = 4.5V) RDS(ON) < 21mW (VGS = 2.5V) RDS(ON) < 30mW (VGS = 1.8V)
ESD Rating: 2000V HBM 100% UIS Tested 100% Rg Tested
Top View
SOIC-8 Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
D2 D2 D1 D1 G1
D1 G2
Pin1
Absolute...
