Download AO4806 Datasheet PDF
Kexin Semiconductor
AO4806
AO4806 is Dual N-Channel MOSFET manufactured by Kexin Semiconductor.
Features - VDS (V) = 20V - ID = 9.4 A (VGS = 10V) - RDS(ON) < 14mΩ (VGS = 10V) - RDS(ON) < 15mΩ (VGS = 4.5V) - RDS(ON) < 21mΩ (VGS = 2.5V) - RDS(ON) < 30mΩ (VGS = 1.8V) - ESD Rating: 2000V HBM D1 D2 G1 G2 S1 S2 +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source2 2 Gate2 3 Source1 4 Gate1 5 Drain1 6 Drain1 7 Drain2 8 Drain2 - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Steady-State Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD Rth JA Rth JC TJ Tstg Rating 20 ±12 9.4 7.5 40 2 1.28 62.5 110 40 150 -55 to 150 Unit V A W ℃/W...