AO4807
AO4807 is Dual P-Channel MOSFET manufactured by EVVO.
Description
The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V)
Dual P-Channel MOSFET
D1
D2
G1
G2
S1
S2
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
TA=25°C Power Dissipation A TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Maximum -30 ±20 -6 -5 -30 2 1.44
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State
RθJA
48 74
62.5 110
Maximum Junction-to-Lead...
