AO4806
AO4806 is 20V Dual N-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description
The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.
Product Summary
VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14m W (VGS = 10V) RDS(ON) < 15m W (VGS = 4.5V) RDS(ON) < 21m W (VGS = 2.5V) RDS(ON) < 30m W (VGS = 1.8V)
ESD Rating: 2000V HBM 100% UIS Tested 100% Rg Tested
Top View
SOIC-8 Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
D2 D2 D1 D1 G1
D1 G2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Power Dissipation
TA=25°C TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State
Symbol Rq JA Rq JL
Maximum 20 ±12 9.4 7.5 40 2...
