AO4800BL Datasheet | Alpha & Omega Semiconductors

Description The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D1 D2 SOIC-8 G2 S1 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current Maximum 30 ±12 6.9 5.8 40 1.9 1.2 12 22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG W A m J °C Repetitive avalanche energy 0.3m H Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 55 90 40 Max 62.5 110 48 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. AO4800B/L .. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter...