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AO4800B Datasheet 30v Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4800B 30V Dual N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 100% UIS Tested 100% Rg Tested 30V 6.9A < 27mΩ < 32mΩ < 50mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 6.9 5.8 30 14 10 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 4: Dec 2011 .aosmd.

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