Datasheet Summary
AO4836 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4836 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters. It is ESD protected. AO4836 is Pbfree (meets ROHS & Sony 259 specifications). AO4836L is a Green Product ordering option. AO4836 and AO4836L are electrically identical.
Features
VDS (V) = 30V ID = 7.2A RDS(ON) < 24m Ω (VGS = 10V) RDS(ON) < 40m Ω (VGS = 4.5V) ESD rating: 1500V (HBM)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
..
G1 S1
G2...