AO4912 Datasheet | Alpha & Omega Semiconductors

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product .. ordering option. AO4912 and AO4912L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V)...