AO5600E Datasheet | Alpha & Omega Semiconductors

AO5600E plementary Enhancement Mode Field Effect Transistor General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS pliant -AO5600EL is Halogen Free ESD PROTECTED! Features n-channel VDS (V) = 20V, ID = 0.6A (VGS=4.5V) RDS(ON)< 0.65Ω (VGS= 4.5V) RDS(ON)< 0.75Ω (VGS= 2.5V) RDS(ON)< 0.95Ω (VGS= 1.8V) p-channel VDS (V) = -20V, ID = -0.5A (VGS=-4.5V) RDS(ON)< 0.8Ω (VGS= -4.5V) RDS(ON)< 1.0Ω (VGS= -2.5V) RDS(ON)< 1.3Ω (VGS= -1.8V) S1 G1 D2 SC-89-6 D1 G2 S2 D1 1 G1 G2 S1 Absolute...