Datasheet Summary
January 2003
AO6407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V)
TSOP6 Top View
D 16 D D 25 D G 34...