Datasheet Summary
AO6408 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical.
Features
VDS (V) = 20V (VGS = 10V) ID = 8.8A RDS(ON) < 18m Ω (VGS = 10V) RDS(ON) < 20m Ω (VGS = 4.5V) RDS(ON) < 25m Ω (VGS = 2.5V) RDS(ON) < 32m Ω (VGS = 1.8V) ESD Rating: 2000V HBM
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