Datasheet Summary
AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical.
- RoHS pliant -Halogen Free
Features
VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) ESD Protected!
D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2
Rg Rg
D2
G1
G2
S1
S2...
