Datasheet Summary
20V Dual N-Channel MOSFET
General Description
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14mW (VGS = 10V) RDS(ON) < 15mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 2.5V) RDS(ON) < 28mW (VGS = 1.8V) ESD Rating: 2000V HBM
TSSOP-8 Top View
D1 1
S1 2 S1 3 G1 4
8 D2
7 S2 6 S2 5 G2
D1
D2
G1
G2
S1
S2...
