Datasheet Summary
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AOB430 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS & Sony 259 specifications). AOB430L is a Green Product ordering option. AOB430 and AOB430L are electrically identical.
Features
VDS (V) = 60V ID = 12A (Vgs=10V) RDS(ON) < 63 mΩ (VGS =10V) RDS(ON) < 85 mΩ (VGS = 6V)
TO-263 D2-PAK
D Top View Drain Connected to Tab G...