Datasheet Summary
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AOB434 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB434 is Pb-free (meets ROHS & Sony 259 specifications). AOB434L is a Green Product ordering option. AOB434 and AOB434L are electrically identical.
TO-263 D2-PAK
Features
VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9.5 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V)
Top View Drain Connected to...