Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET Technology
- Low RSS(ON)
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 5.6mΩ < 6mΩ < 7mΩ < 8.5mΩ
HBM Class 3A
AlphaDFNTM 1.9x1.6_6
Top View
Bottom View
PIN1
Top View PIN1
Bottom View
1, 3: Source(FET1) 2: Gate(FET1)
4, 6: Source(FET2) 5: Gate(FET2)
Orderable Part...