Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET Technology
- Low RSS(ON)
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 3.4mΩ < 3.8mΩ < 4.4mΩ < 5.3mΩ
HBM Class 2
AlphaDFNTM 1.84x1.96_10
Top View
Bottom View
Top View
Bottom View
PIN1
G1
G2
PIN1
Orderable Part Number
1,2,4,5. Source1(FET1) 6,7,9,10....