Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RSS(ON)
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 3.7mΩ < 3.8mΩ < 4mΩ < 4.6mΩ < 5.6mΩ
HBM Class 2
AlphaDFN 3.01x1.52A_10
Top View
Bottom View
G1 G2
1, 2, 7, 8: Source(FET1) 5: Gate(FET1)
Pin1
3, 4, 9, 10: Source(FET2) 6:...