Datasheet Summary
AOD4120 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identical.
TO-252 D-PAK
Features
VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested
Top View Drain Connected to...
