AOD412 Datasheet | Alpha & Omega Semiconductors

Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation B Power Dissipation Maximum 30 ±20 85 65 200 30 120 100 50 2.5 1.6 -55 to 175 Units V V A A m J W W °C TC=25°C TC=100°C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 14.2 39 0.8 Max 20 50 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125°C 1.5 85 5.5 8.8 8.25 60 0.72 1 85 1320 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 533 154 0.95 26 VGS=4.5V, VDS=15V,...