Datasheet Summary
AOI452 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) =25V ID = 55 A (VGS = 10V)
RDS(ON) < 8.7 mΩ (VGS = 10V) RDS(ON) < 14.7 mΩ (VGS = 4.5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
IPAK
GD S
Top View Drain Connected to...