Datasheet Summary
600V, a MOS5 TM N-Channel Power Transistor
General Description
- Proprietary aMOS5TM technology
- Low RDS(ON)
- Optimized switching parameters for better EMI performance
- Enhanced body diode for robustness and fast reverse recovery
Applications
- SMPS with PFC,Flyback and LLC topologies
- Micro inverter with DC/AC inverter topology
Top View TO-247
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ
Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 100A < 0.125Ω 39nC
6.3mJ
Orderable Part Number
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