Datasheet Summary
AON3812 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
.. provide
Features
VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V)
The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration. Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 specifications).
D1 DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2...