Datasheet Summary
AON4803 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON4803 uses advanced trench technology to provide excellent R DS(ON), low gate charge and .. operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AON4803 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = -20V ID = -3.4A (V GS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 165mΩ (VGS = -1.8V)
D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
D2
G1 S1
G2 S2
DFN3X2-8L...