Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Latest Trench Power MOSFET technology
- Very Low RDS(on) at 4.5VGS
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free pliant
Application
- DC/DC Converters in puting, Servers, and POL
- Isolated DC/DC Converters in Tele and Industrial
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Q1 30V 16A <10.2mW <15.8mW
Q2 30V 18A <7.7mW <11.6mW
100% UIS Tested 100% Rg Tested
Power DFN3x3A
Top View
Bottom View
G2 S2 S2 S2 (S1/D2)
D1
Top View
Bottom View
D1 G1 D1...