Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Bottom source technology
- Very Low RDS(ON) at Vgs 4.5V
- Low Gate Charge
- High Current Capability
- RoHS 2.0 and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1
Q2
30V 30V
50A 50A
< 4.7mΩ < 5.8mΩ
< 5.7mΩ < 7.3mΩ
Applications
- Buck-boost Converters in puting
- Point of Load Converter
- See Note I
100% UIS Tested 100% Rg Tested
DFN3.3x3.3B
Top View Q1
Bottom View
Pin 1
Q2
Pin 1
Orderable Part Number
Package Type
DFN3.3x3.3B
Form...