Datasheet Summary
650V Enhancement Mode GaN Transistor
Features
- 650V Enhancement Mode GaN Transistor
- Normal-off Design
- Ultra-low Qg
- No Qrr
- Low Inductance
Applications
- Server Power Supplies
- High-Frequency Converters
- Resonant Topologies
Product Summary
VDS @ TJ, max IDM RDS(ON) Qg, typ Eoss @ 400V
650V 45A 70mΩ 6.9nC 6µJ
Pin Configuration and Pin Names
DFN 8x8
Top View
Bottom View
Pin Names
Gate Drain
Kelvin Source Source Thermal Pad (Connected to Source)
8 1, 2, 3, 4
7 5, 6 TP
D 1, 2, 3, 4
8 G
SK 7
5, 6...