Datasheet Summary
600V, a MOS5 TM N-Channel Power Transistor
General Description
- Proprietary aMOS5TM technology
- Low RDS(ON)
- Optimized switching parameters for better EMI performance
- Enhanced body diode for robustness and fast reverse recovery
Applications
- SMPS with PFC, Flyback and LLC topologies
- Micro inverter with DC/AC inverter topology
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 96A < 0.18Ω 46nC 4.9mJ
Top View
DFN8X8
Bottom View
Pin1:G
Orderable Part Number
Package Type
DFN8x8_4L_EP1_S
Pin2: Driver Source
S Driver Source
Form
Tape & Reel
Minimum Order Quantity
Absolute Maximum...