Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Bottom Source Technology
- Very Low RDS(ON)
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1
Q2
30V
30V
55A
85A
< 4.95mΩ < 1.35mΩ
< 7.95mΩ < 1.75mΩ
Applications
- DC/DC Converters in puting, Servers, and POL
- Non-Isolated DC/DC Converters in Tele and Industrial
100% UIS Tested 100% Rg Tested
Top View
DFN 5X6E
Bottom View
Top View
Bottom View
D2/S1
G2
G1 1
8...