AOT12N40 Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
Product Summary The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT12N40L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220 500V@150℃ 11A <0.59Ω D DS G G AOT12N40 Parameter Symbol Maximum Drain-Source Voltage VDS 400 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 11 7 Pulsed Drain Current C IDM 28 Avalanche Current C IAR 3.5 Repetitive avalanche energy C EAR 184 Single pulsed avalanche energy G EAS 368 Peak diode recovery dv/dt dv/dt 5 TC=25°C Power Dissipation B Derate above 25oC PD 184 1.5 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Typical 54 - Maximum 65 0.5 Maximum Junction-to-Case RθJC 0.56 0.68 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev0: Sep 2012 Page 1 of 5 AOT12N40 Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=400V, VGS=0V VDS=320V, TJ=125°C IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON).
