AOT12N40 Datasheet
AOT12N40 Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By provid.
5°C Power Dissipation B Derate above 25oC PD 184 1.5 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Sym.
AOT12N40 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source.
*Drain Current
*ID= 11A@ TC=25℃
*Drain Source Voltage-
: VDSS= 400V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.59Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies a.