Datasheet Summary
600V, a MOS5 TM N-Channel Power Transistor
General Description
Product Summary
- Proprietary αMOS5TM technology
- Low RDS(ON)
- Optimized switching parameters for better EMI performance
- Enhanced body diode for robustness and fast reverse recovery
VDS @ Tj,max IDM RDS(ON),max Qg,typ
Eoss @ 400V
Applications
- SMPS with PFC, Flyback and LLC topologies
- Micro inverter with DC/AC inverter topology
100% UIS Tested 100% Rg Tested
TO-262F
Top View
Bottom View
700V 152A < 0.095Ω 78nC
7.8mJ
G DS
S DG
Orderable Part Number
Package Type
TO262F
Form
Tube
Minimum Order...