BLC9G20LS-120V Description
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;.
BLC9G20LS-120V Key Features
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
- Designed for broadband operation (1805 MHz to 1995 MHz)
- Lower output capacitance for improved performance in Dohe