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BLC9G20LS-120VT - Power LDMOS transistor

Description

120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical).
  • Designed for broadband operation (1805 MHz to 1995 MHz).
  • Lower output capacitance for improved performance in Doh.

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Datasheet Details

Part number BLC9G20LS-120VT
Manufacturer Ampleon
File Size 597.79 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC9G20LS-120VT Datasheet
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Full PDF Text Transcription

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BLC9G20LS-120VT Power LDMOS transistor Rev. 1 — 23 May 2017 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 700 28 30 18.5 31 31 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.
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