• Part: BLC9G27LS-150AV
  • Description: Power LDMOS transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 1.28 MB
Download BLC9G27LS-150AV Datasheet PDF
Ampleon
BLC9G27LS-150AV
BLC9G27LS-150AV is Power LDMOS transistor manufactured by Ampleon.
description 150 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f PL(AV) Gp D (MHz) (V) (W) (d B) (%) IS-95 2500 to 2690 28 14.8 48 ACPR (d Bc) - 40 [1] [1] Test signal: IS-95 with pilot, paging, sync, 6 traffic channels with Walsh codes 8 - 13; PAR = 9.7 d B at 0.01 % probability. 1.2 Features and benefits - Excellent ruggedness - High efficiency - Low thermal resistance providing excellent thermal stability - Decoupling leads to enable improved video bandwidth - Lower output capacitance for improved performance in Doherty applications - Designed for low memory effects providing excellent pre-distortability - Internally matched for ease of use - Integrated ESD protection - pliant to Restriction of Hazardous Substances (Ro HS) Directive 2002/95/EC 1.3 Applications - RF power amplifier for W-CDMA base stations and multi carrier applications in the 2496 MHz to 2690 MHz frequency range Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 Pinning Description drain1 (main) drain2 (peak) gate1 (main) gate2 (peak) video decoupling (main) video decoupling (peak) source [1] Connected to flange. 3. Ordering information Simplified outline Graphic...