BLC9G27LS-151AV Datasheet PDF (Power LDMOS transistor)

BLC9G27LS-151AV - Power LDMOS transistor

Description

150 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.

Features

Excellent ruggedness.
High efficiency.
Low thermal resistance providing excellent thermal stability.
Decoupling leads to enable improved video bandwidth.
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLC9G27LS-151AV
Manufacturer	Ampleon
File Size	438.49 KB
Description	Power LDMOS transistor
Datasheet	BLC9G27LS-151AV Datasheet
Additional preview pages of the BLC9G27LS-151AV datasheet.

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Full PDF Text Transcription

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BLC9G27LS-151AV Power LDMOS transistor Rev. 3 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 28.2 15.5 D (%) 48 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.

Published: Apr 26, 2018 |